Bolbukov V P

Сoating deposition in a mixed flow of metal vapor and fast gas molecules

Сoating deposition on dielectrics is used a source of metal atoms and fast gas molecules produced due to charge exchange collisions of accelerated ions in a processing chamber is described. The metal atoms are produced due to ion sputtering of a target placed at the bottom of the hollow cathode inside the source. When a mixture of argon and nitrogen is used, nitride coatings are produced with deposition rate up to 4 µm/h, the coatings being interruptedly bombarded by molecules with energy rеgulated from 10 to 300 eV.

Keywords: target, sputtering, vapor, coating, deposition, fast molecules.

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